Non-volatile memories based on Si super(+)-implanted gate oxides

Non-volatile memories based on Si super(+)-implanted gate oxides

Electrical properties of 20-30 nm gate oxides implanted with Si super(+) ions are investigated using MOS capacitors and transistors. The observed programming window can reach several volts and the devices exhibit good retention behavior. A first 256 k - nvSRAM is demonstrated showing a programming w...

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Veröffentlicht in:Microelectronic engineering 2001-11, Vol.59 (1-4), p.247-252
Hauptverfasser: Gebel, T, Von Borany, J, Thees, H-J, Wittmaack, M, Stegemann, K-H, Skorupa, W
Format: Artikel
Sprache:eng
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Zusammenfassung:Electrical properties of 20-30 nm gate oxides implanted with Si super(+) ions are investigated using MOS capacitors and transistors. The observed programming window can reach several volts and the devices exhibit good retention behavior. A first 256 k - nvSRAM is demonstrated showing a programming window > 1 V for write pulses of 12 V/8 ms. copyright 2001 Elsevier Science B.V. All rights reserved.
ISSN:0167-9317