Nano-indentation studies of xerogel and SiLK low-K dielectric materials

Low-K dielectric films have reduced hardness and modulus relative to traditional dielectric materials. There are many potential challenges associated with these materials to integrate with integrated circuit (IC) technologies. It is important to evaluate the mechanical properties of low-K materials along with their electrical characterization to implement them in sub - 0.25 mu m devices. In this investigation, we have discussed the mechanical properties of low-K dielectric materials and evaluated the mechanical behavior of SiLK and Xerogel samples using nano-indentation studies. Surface behavior after indentation is also investigated with high resolution scanning electron microscopy. Nano-indentation using the continuous stiffness measurement technique is shown to be reliable for evaluating the mechanical properties of thin and low modulus films.