Integration of Si and SiGe with Al sub(2)O sub(3) (sapphire)

Through the characterization of structural defects in bonded silicon on sapphire handle-substrates (SOS) that develop with exposure to device processing temperatures, we have investigated and implemented a methodology to study wafer bonding reaction chemistry. In this context, we present the result and analysis of this development which provides (through LPCVD SiO sub(2 ) mitigation of bond reaction-induced bubbles) the dislocation-free bonded bulk-quality thin silicon layers ( < 100 nm thick) on sapphire or bonded strain relieved silicon germanium Si sub(1-x)Ge sub(x) (x greater than or equal to 0.35) layers on sapphire for device fabrication processes. The resulting bonded layers have excellent structural properties, as evidenced by (1) X-ray diffraction (peak position and peak breadth) before and after exposure to elevated temperatures and (2) cross-sectional TEM. copyright 2001 Elsevier Science B.V. All rights reserved.