Inter-diffusion and nitrogen absorption in Pd/Ti/SiO2/Si multi-layer system

The development of automotive electronics and avionics requires that some electronic devices or sensors be capable of withstanding high temperatures (300 C or higher). This brings many new problems to the electronic interconnections and related materials. The Pd /Ti multilayer thin-film couple is th...

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Veröffentlicht in:Journal of materials science letters 2001-05, Vol.20 (10), p.911-912
Hauptverfasser: LIGUANG DU, AHAT, Shawkret, MEI SHENG, ZHIGOU SUN, WEIDONG HUANG, LE LUO
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container_issue 10
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container_title Journal of materials science letters
container_volume 20
creator LIGUANG DU
AHAT, Shawkret
MEI SHENG
ZHIGOU SUN
WEIDONG HUANG
LE LUO
description The development of automotive electronics and avionics requires that some electronic devices or sensors be capable of withstanding high temperatures (300 C or higher). This brings many new problems to the electronic interconnections and related materials. The Pd /Ti multilayer thin-film couple is thought to be a potential candidate as a bonding pad material for its good stability at high temperatures. In this study, the inter-diffusion between Pd/Ti layers and the reaction of the multi-metal layers with ambient gases was investigated by measuring the in-situ resistivity change of the film at 300 C. The results clearly demonstrate that nitrogen enters the multilayer and affects resistivity. (CSA)
doi_str_mv 10.1023/A:1010976716157
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subjects Chemical interdiffusion
diffusion barriers
Condensed matter: structure, mechanical and thermal properties
Diffusion in solids
Diffusion
interface formation
Exact sciences and technology
Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties
Physics
Solid surfaces and solid-solid interfaces
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Transport properties of condensed matter (nonelectronic)
title Inter-diffusion and nitrogen absorption in Pd/Ti/SiO2/Si multi-layer system
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