Inter-diffusion and nitrogen absorption in Pd/Ti/SiO2/Si multi-layer system

The development of automotive electronics and avionics requires that some electronic devices or sensors be capable of withstanding high temperatures (300 C or higher). This brings many new problems to the electronic interconnections and related materials. The Pd /Ti multilayer thin-film couple is thought to be a potential candidate as a bonding pad material for its good stability at high temperatures. In this study, the inter-diffusion between Pd/Ti layers and the reaction of the multi-metal layers with ambient gases was investigated by measuring the in-situ resistivity change of the film at 300 C. The results clearly demonstrate that nitrogen enters the multilayer and affects resistivity. (CSA)