Ti/Al and Cr/Al Ohmic Contacts to n-Type GaN Formed by Furnace Annealing
High-quality, low-resistance ohmic contacts are critical for the development of GaN devices for high-temperature applications. Ti /Al metallization has been previously shown to form ohmic contacts to n-type GaN after 900 C rapid thermal annealing (RTA). In this work we report on the investigation of...
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Veröffentlicht in: | Materials science forum 1998-01, Vol.264-268, p.1407-1410 |
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Hauptverfasser: | , , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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