Mass Effect of Etching Gases in Vertical and Smooth Dry Etching of InP

Mass Effect of Etching Gases in Vertical and Smooth Dry Etching of InP

We compared several kinds of etching gases in inductively coupled plasma (ICP) and electron cyclotron resonance (ECR) plasma etching processes for investigating the etching performance. It was found that a heavy etching gas such as SiCl 4 plays an important role for smooth etching of InP, which is i...

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Veröffentlicht in:Japanese Journal of Applied Physics 2001-03, Vol.40 (3R), p.1528-1529
Hauptverfasser: Matsutani, Akihiro, Ohtsuki, Hideo, Muta, Seiichi, Koyama, Fumio, Iga, Kenichi
Format: Artikel
Sprache:eng
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Zusammenfassung:We compared several kinds of etching gases in inductively coupled plasma (ICP) and electron cyclotron resonance (ECR) plasma etching processes for investigating the etching performance. It was found that a heavy etching gas such as SiCl 4 plays an important role for smooth etching of InP, which is independent of ICP and ECR plasma sources.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.40.1528