Many carrier effects in self-assembled InP quantum dots

Excitation power density dependence of InP self-assembled quantum dots (SADs) was investigated under band-to-band excitation in a Ga 0.5In 0.5P matrix by means of macro- (conventional) and micro-spectroscopy. State filling of confined excitonic states was studied in detail by micro-photoluminescence...

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Veröffentlicht in:Solid state communications 2001-01, Vol.117 (7), p.435-440
Hauptverfasser: Sugisaki, M, Ren, H.-W, Nair, S.V, Nishi, K, Masumoto, Y
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Sprache:eng
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Zusammenfassung:Excitation power density dependence of InP self-assembled quantum dots (SADs) was investigated under band-to-band excitation in a Ga 0.5In 0.5P matrix by means of macro- (conventional) and micro-spectroscopy. State filling of confined excitonic states was studied in detail by micro-photoluminescence (μ-PL) spectra and images. The efficiency of the state filling differs from dot to dot, which depends on the inflow and outflow rates of the excitons. Sharp μ-PL lines from a single confined exciton and biexciton were clearly observed. The observed biexciton binding energy of an InP SAD is a few times larger than that of the bulk InP, suggesting that the multi-exciton states are stabilized because of the confinement.
ISSN:0038-1098
1879-2766
DOI:10.1016/S0038-1098(00)00470-1