A monolithic Si PCS-CDMA power amplifier with 30% PAE at 1.9 GHz using a novel biasing scheme

A monolithic Si PCS-CDMA power amplifier with 30% PAE at 1.9 GHz using a novel biasing scheme

A monolithic Si personal-communication system-CDMA power amplifier (PA) capable of delivering 28.2-dBm output power with 30% power-added efficiency and -45-dBc adjacent-channel-power ratio at 1.9 GHz and 3.6-V supply voltage is presented for the first time in this paper. The PA implemented in a 30-G...

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Veröffentlicht in:IEEE transactions on microwave theory and techniques 2001-09, Vol.49 (9), p.1552-1557
Hauptverfasser: Sifen Luo, Sowlati, T.
Format: Artikel
Sprache:eng
Schlagworte:
Bias
Capacitors
Electric potential
Impedance
Inductors
Microwaves
Multiaccess communication
Power amplifiers
Power generation
Radio frequency
Radiofrequency amplifiers
Silicon
Simulation
Telephone sets
Voltage
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Zusammenfassung:A monolithic Si personal-communication system-CDMA power amplifier (PA) capable of delivering 28.2-dBm output power with 30% power-added efficiency and -45-dBc adjacent-channel-power ratio at 1.9 GHz and 3.6-V supply voltage is presented for the first time in this paper. The PA implemented in a 30-GHz BiCMOS process incorporates a novel impedance-controllable biasing scheme to control the class of operation and bias impedance of the output stage. Both simulated and measured results are presented for comparison.
ISSN:0018-9480
1557-9670
DOI:10.1109/22.942566