Multiple electron-beam lithography
A number of multiple electron-beam approaches are currently under evaluation for sub-100-nm lithography. These approaches offer the potential of improving throughput for direct wafer writing and mask patterning and could have far reaching implications for the semiconductor industry. A brief review o...
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Veröffentlicht in: | Microelectronic engineering 2001-09, Vol.57, p.117-135 |
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Hauptverfasser: | , , , |
Format: | Artikel |
Sprache: | eng |
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Online-Zugang: | Volltext |
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Zusammenfassung: | A number of multiple electron-beam approaches are currently under evaluation for sub-100-nm lithography. These approaches offer the potential of improving throughput for direct wafer writing and mask patterning and could have far reaching implications for the semiconductor industry. A brief review of important examples of these approaches are given with a discussion on throughput. The current status of two specific approaches, the microcolumn and the single column with a multiple electron-beam source (photocathode), are reported. In particular, a more detailed review of the recent advances in the microcolumn technology is presented. |
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ISSN: | 0167-9317 1873-5568 |
DOI: | 10.1016/S0167-9317(01)00528-7 |