Multiple electron-beam lithography

A number of multiple electron-beam approaches are currently under evaluation for sub-100-nm lithography. These approaches offer the potential of improving throughput for direct wafer writing and mask patterning and could have far reaching implications for the semiconductor industry. A brief review o...

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Veröffentlicht in:Microelectronic engineering 2001-09, Vol.57, p.117-135
Hauptverfasser: Chang, T.H.P., Mankos, Marian, Lee, Kim Y., Muray, Larry P.
Format: Artikel
Sprache:eng
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Zusammenfassung:A number of multiple electron-beam approaches are currently under evaluation for sub-100-nm lithography. These approaches offer the potential of improving throughput for direct wafer writing and mask patterning and could have far reaching implications for the semiconductor industry. A brief review of important examples of these approaches are given with a discussion on throughput. The current status of two specific approaches, the microcolumn and the single column with a multiple electron-beam source (photocathode), are reported. In particular, a more detailed review of the recent advances in the microcolumn technology is presented.
ISSN:0167-9317
1873-5568
DOI:10.1016/S0167-9317(01)00528-7