Single contact electron beam induced currents (SCEBIC) in semiconductor junctions. Part I: Quantitative verification of SCEBIC model

Single contact electron beam induced current (SCEBIC) transients have been obtained from a semiconductor junction for varying electron beam currents. The transients are shown to match a previously proposed model that postulates the existence of a parasitic capacitance between the unconnected junction region and the electrostatic ground. An experimental method to quantitatively verify the SCEBIC model and to extract relevant parameters is presented. The limitations of the model are discussed.