A sideband-injection locked extended cavity diode laser for interrogating cold trapped Strontium ions

A simple optical sideband injection locking technique is demonstrated to frequency offset-lock a 674 nm slave extended cavity diode laser to a single frequency source. By injecting light from a master laser into either sideband of the frequency modulated extended cavity slave laser, it is shown that...

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Veröffentlicht in:Optics communications 1998-12, Vol.158 (1), p.36-40
Hauptverfasser: Clarke, R.B.M, Riis, E, Barwood, G.P, Gill, P, Huang, G, Klein, H.A
Format: Artikel
Sprache:eng
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Zusammenfassung:A simple optical sideband injection locking technique is demonstrated to frequency offset-lock a 674 nm slave extended cavity diode laser to a single frequency source. By injecting light from a master laser into either sideband of the frequency modulated extended cavity slave laser, it is shown that the carrier of the slave is frequency locked to the master laser with a relative linewidth much less than 10 Hz. The locking bandwidth is investigated to determine the largest capture range. An observation of the 674 nm 2 S 1/2– 2 D 5/2 transition in a single ion of 88 Sr + was performed using this laser system, yielding ≈1 kHz linewidth Zeeman structure, limited by the master laser linewidth. National Physical Laboratory
ISSN:0030-4018
1873-0310
DOI:10.1016/S0030-4018(98)00575-6