A sideband-injection locked extended cavity diode laser for interrogating cold trapped Strontium ions
A simple optical sideband injection locking technique is demonstrated to frequency offset-lock a 674 nm slave extended cavity diode laser to a single frequency source. By injecting light from a master laser into either sideband of the frequency modulated extended cavity slave laser, it is shown that...
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Veröffentlicht in: | Optics communications 1998-12, Vol.158 (1), p.36-40 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | A simple optical sideband injection locking technique is demonstrated to frequency offset-lock a 674 nm slave extended cavity diode laser to a single frequency source. By injecting light from a master laser into either sideband of the frequency modulated extended cavity slave laser, it is shown that the carrier of the slave is frequency locked to the master laser with a relative linewidth much less than 10 Hz. The locking bandwidth is investigated to determine the largest capture range. An observation of the 674 nm
2
S
1/2–
2
D
5/2
transition in a single ion of
88
Sr
+
was performed using this laser system, yielding ≈1 kHz linewidth Zeeman structure, limited by the master laser linewidth. National Physical Laboratory |
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ISSN: | 0030-4018 1873-0310 |
DOI: | 10.1016/S0030-4018(98)00575-6 |