Low-noise, low-power monolithically integrated active 20 GHz mixer in SiGe technology

Low-noise, low-power monolithically integrated active 20 GHz mixer in SiGe technology

The broadband mixer circuits for wireless telecommunication systems in silicon bipolar technology is presented. The optimization of low-power and low-noise with conversion gains less than 10 dB is also discussed. The highest operating frequency for the monolithic mixer circuits in silicon based tech...

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Veröffentlicht in:Electronics letters 2001-01, Vol.37 (1), p.36-37
Hauptverfasser: Hackl, S, Meister, T F, Wurzer, M, Knapp, H, Aufinger, K, Treitinger, L, Scholtz, A L
Format: Artikel
Sprache:eng
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Zusammenfassung:The broadband mixer circuits for wireless telecommunication systems in silicon bipolar technology is presented. The optimization of low-power and low-noise with conversion gains less than 10 dB is also discussed. The highest operating frequency for the monolithic mixer circuits in silicon based technology is presented.
ISSN:0013-5194
DOI:10.1049/el:20010034