A simple scheme for calculating quantum confinement effects in low dimensional systems

A simple scheme for calculating quantum confinement effects in low dimensional systems

A simple scheme for calculating the quantum confinement effects in low dimensional systems is developed and an exactly solvable problem is used to indicate the general approach and to verify the general accuracy attained by the scheme. The size dependence of Γ 1, c and X 1, c states in GaAs cubic qu...

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Veröffentlicht in:Solid state communications 1998-12, Vol.109 (4), p.243-247
Hauptverfasser: Ren, Shang Yuan, Song, Jian
Format: Artikel
Sprache:eng
Schlagworte:
A. nanostructure
A. semiconductors
Condensed matter: electronic structure, electrical, magnetic, and optical properties
D. electronic states(localized)
D. optical properties
D. phonons
Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
Electron states and collective excitations in thin films, multilayers, quantum wells, mesoscopic and nanoscale systems
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Exact sciences and technology
Physics
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Zusammenfassung:A simple scheme for calculating the quantum confinement effects in low dimensional systems is developed and an exactly solvable problem is used to indicate the general approach and to verify the general accuracy attained by the scheme. The size dependence of Γ 1, c and X 1, c states in GaAs cubic quantum dots with edge length up to 700 Å is investigated, as an example of more practical applications.
ISSN:0038-1098
1879-2766
DOI:10.1016/S0038-1098(98)00565-1