Multi-component high- K gate dielectrics for the silicon industry

The exponential growth of the silicon industry can be attributed to that fact that silicon has a native oxide that is silicon dioxide. With SiO 2 soon approaching its fundamental limit, we must find an alternate to SiO 2 or a new switch to replace MOSFETs. In this paper we focus on the leading alter...

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Bibliographische Detailangaben

Veröffentlicht in:	Microelectronic engineering 2001-11, Vol.59 (1), p.351-359
Hauptverfasser:	Manchanda, L, Morris, M.D, Green, M.L, van Dover, R.B, Klemens, F, Sorsch, T.W, Silverman, P.J, Wilk, G, Busch, B, Aravamudhan, S
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum oxide and aluminates Applied sciences Electronics Exact sciences and technology Gate dielectric High- K dielectrics Interfaces Materials Scaling Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors
Online-Zugang:	Volltext
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