Multi-component high- K gate dielectrics for the silicon industry

The exponential growth of the silicon industry can be attributed to that fact that silicon has a native oxide that is silicon dioxide. With SiO 2 soon approaching its fundamental limit, we must find an alternate to SiO 2 or a new switch to replace MOSFETs. In this paper we focus on the leading alternate gate dielectrics. We first discuss the selection criteria for alternate gate dielectrics and why it is important to have an amorphous gate dielectric. SiO 2 and aluminum oxide remain amorphous at very high temperatures. For dielectrics with K>15 and gate power