High-resolution in-situ study of gold electromigration: Test time reduction
The electromigration behaviour of a large set of gold interconnections is studied using the high-resolution in-situ measurement technique. First, initial resistance drifts ( Delta R/R sub(0)=0.1%) have been recorded on only one sample for each stress level in a broad matrix of stress levels. Using t...
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Veröffentlicht in: | Microelectronics and reliability 2001-09, Vol.41 (9-10), p.1439-1442 |
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creator | Croes, K Dreesen, R Manca, J De Ceuninck, W De Schepper, L Tielemans, L Van Der Wel, P |
description | The electromigration behaviour of a large set of gold interconnections is studied using the high-resolution in-situ measurement technique. First, initial resistance drifts ( Delta R/R sub(0)=0.1%) have been recorded on only one sample for each stress level in a broad matrix of stress levels. Using these measurements, the activation energy and the current exponent have been determined accurately. Second, failure times ( Delta R/R sub(0)=10%) and values for sigma have been obtained by applying higher stress levels on a population of test lines. A combination of this two-step procedure with our high-resolution equipment yields a full characterisation of gold electromigration and a lifetime prediction with a significant higher accuracy and far less measurement time than using low resolution test systems. copyright 2001 Elsevier Science Ltd. All rights reserved. |
doi_str_mv | 10.1016/S0026-2714(01)00179-2 |
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fullrecord | <record><control><sourceid>proquest</sourceid><recordid>TN_cdi_proquest_miscellaneous_26765338</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>26765338</sourcerecordid><originalsourceid>FETCH-LOGICAL-p184t-a3650257895e0b9bfdc574fb34d508f8de9abcfc74671ded33fa63fb5a9d529a3</originalsourceid><addsrcrecordid>eNo9js1KAzEYRbNQsFYfQchKdBH9kkySiTsp1ooFF9Z1yeRnjKSTOsksfHstiqsDh8PlInRB4YYClbevAEwSpmhzBfQagCpN2BGa_esTdFrKBwAooHSGnlexfyejLzlNNeYBx4GUWCdc6uS-cA64z8lhn7ytY97FfjSH7A5vfKm4xp3Ho3eTPcgzdBxMKv78j3P0tnzYLFZk_fL4tLhfkz1tm0oMlwKYUK0WHjrdBWeFakLHGyegDa3z2nQ2WNVIRZ13nAcjeeiE0U4wbfgcXf7u7sf8Of382O5isT4lM_g8lS2TSgrOW_4NGp5RIQ</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>26765338</pqid></control><display><type>article</type><title>High-resolution in-situ study of gold electromigration: Test time reduction</title><source>Access via ScienceDirect (Elsevier)</source><creator>Croes, K ; Dreesen, R ; Manca, J ; De Ceuninck, W ; De Schepper, L ; Tielemans, L ; Van Der Wel, P</creator><creatorcontrib>Croes, K ; Dreesen, R ; Manca, J ; De Ceuninck, W ; De Schepper, L ; Tielemans, L ; Van Der Wel, P</creatorcontrib><description>The electromigration behaviour of a large set of gold interconnections is studied using the high-resolution in-situ measurement technique. First, initial resistance drifts ( Delta R/R sub(0)=0.1%) have been recorded on only one sample for each stress level in a broad matrix of stress levels. Using these measurements, the activation energy and the current exponent have been determined accurately. Second, failure times ( Delta R/R sub(0)=10%) and values for sigma have been obtained by applying higher stress levels on a population of test lines. A combination of this two-step procedure with our high-resolution equipment yields a full characterisation of gold electromigration and a lifetime prediction with a significant higher accuracy and far less measurement time than using low resolution test systems. copyright 2001 Elsevier Science Ltd. All rights reserved.</description><identifier>ISSN: 0026-2714</identifier><identifier>DOI: 10.1016/S0026-2714(01)00179-2</identifier><language>eng</language><ispartof>Microelectronics and reliability, 2001-09, Vol.41 (9-10), p.1439-1442</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>315,781,785,27929,27930</link.rule.ids></links><search><creatorcontrib>Croes, K</creatorcontrib><creatorcontrib>Dreesen, R</creatorcontrib><creatorcontrib>Manca, J</creatorcontrib><creatorcontrib>De Ceuninck, W</creatorcontrib><creatorcontrib>De Schepper, L</creatorcontrib><creatorcontrib>Tielemans, L</creatorcontrib><creatorcontrib>Van Der Wel, P</creatorcontrib><title>High-resolution in-situ study of gold electromigration: Test time reduction</title><title>Microelectronics and reliability</title><description>The electromigration behaviour of a large set of gold interconnections is studied using the high-resolution in-situ measurement technique. First, initial resistance drifts ( Delta R/R sub(0)=0.1%) have been recorded on only one sample for each stress level in a broad matrix of stress levels. Using these measurements, the activation energy and the current exponent have been determined accurately. Second, failure times ( Delta R/R sub(0)=10%) and values for sigma have been obtained by applying higher stress levels on a population of test lines. A combination of this two-step procedure with our high-resolution equipment yields a full characterisation of gold electromigration and a lifetime prediction with a significant higher accuracy and far less measurement time than using low resolution test systems. copyright 2001 Elsevier Science Ltd. All rights reserved.</description><issn>0026-2714</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2001</creationdate><recordtype>article</recordtype><recordid>eNo9js1KAzEYRbNQsFYfQchKdBH9kkySiTsp1ooFF9Z1yeRnjKSTOsksfHstiqsDh8PlInRB4YYClbevAEwSpmhzBfQagCpN2BGa_esTdFrKBwAooHSGnlexfyejLzlNNeYBx4GUWCdc6uS-cA64z8lhn7ytY97FfjSH7A5vfKm4xp3Ho3eTPcgzdBxMKv78j3P0tnzYLFZk_fL4tLhfkz1tm0oMlwKYUK0WHjrdBWeFakLHGyegDa3z2nQ2WNVIRZ13nAcjeeiE0U4wbfgcXf7u7sf8Of382O5isT4lM_g8lS2TSgrOW_4NGp5RIQ</recordid><startdate>20010901</startdate><enddate>20010901</enddate><creator>Croes, K</creator><creator>Dreesen, R</creator><creator>Manca, J</creator><creator>De Ceuninck, W</creator><creator>De Schepper, L</creator><creator>Tielemans, L</creator><creator>Van Der Wel, P</creator><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20010901</creationdate><title>High-resolution in-situ study of gold electromigration: Test time reduction</title><author>Croes, K ; Dreesen, R ; Manca, J ; De Ceuninck, W ; De Schepper, L ; Tielemans, L ; Van Der Wel, P</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-p184t-a3650257895e0b9bfdc574fb34d508f8de9abcfc74671ded33fa63fb5a9d529a3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2001</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Croes, K</creatorcontrib><creatorcontrib>Dreesen, R</creatorcontrib><creatorcontrib>Manca, J</creatorcontrib><creatorcontrib>De Ceuninck, W</creatorcontrib><creatorcontrib>De Schepper, L</creatorcontrib><creatorcontrib>Tielemans, L</creatorcontrib><creatorcontrib>Van Der Wel, P</creatorcontrib><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Microelectronics and reliability</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Croes, K</au><au>Dreesen, R</au><au>Manca, J</au><au>De Ceuninck, W</au><au>De Schepper, L</au><au>Tielemans, L</au><au>Van Der Wel, P</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>High-resolution in-situ study of gold electromigration: Test time reduction</atitle><jtitle>Microelectronics and reliability</jtitle><date>2001-09-01</date><risdate>2001</risdate><volume>41</volume><issue>9-10</issue><spage>1439</spage><epage>1442</epage><pages>1439-1442</pages><issn>0026-2714</issn><abstract>The electromigration behaviour of a large set of gold interconnections is studied using the high-resolution in-situ measurement technique. First, initial resistance drifts ( Delta R/R sub(0)=0.1%) have been recorded on only one sample for each stress level in a broad matrix of stress levels. Using these measurements, the activation energy and the current exponent have been determined accurately. Second, failure times ( Delta R/R sub(0)=10%) and values for sigma have been obtained by applying higher stress levels on a population of test lines. A combination of this two-step procedure with our high-resolution equipment yields a full characterisation of gold electromigration and a lifetime prediction with a significant higher accuracy and far less measurement time than using low resolution test systems. copyright 2001 Elsevier Science Ltd. All rights reserved.</abstract><doi>10.1016/S0026-2714(01)00179-2</doi><tpages>4</tpages></addata></record> |
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title | High-resolution in-situ study of gold electromigration: Test time reduction |
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