High-resolution in-situ study of gold electromigration: Test time reduction

The electromigration behaviour of a large set of gold interconnections is studied using the high-resolution in-situ measurement technique. First, initial resistance drifts ( Delta R/R sub(0)=0.1%) have been recorded on only one sample for each stress level in a broad matrix of stress levels. Using t...

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Veröffentlicht in:Microelectronics and reliability 2001-09, Vol.41 (9-10), p.1439-1442
Hauptverfasser: Croes, K, Dreesen, R, Manca, J, De Ceuninck, W, De Schepper, L, Tielemans, L, Van Der Wel, P
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container_end_page 1442
container_issue 9-10
container_start_page 1439
container_title Microelectronics and reliability
container_volume 41
creator Croes, K
Dreesen, R
Manca, J
De Ceuninck, W
De Schepper, L
Tielemans, L
Van Der Wel, P
description The electromigration behaviour of a large set of gold interconnections is studied using the high-resolution in-situ measurement technique. First, initial resistance drifts ( Delta R/R sub(0)=0.1%) have been recorded on only one sample for each stress level in a broad matrix of stress levels. Using these measurements, the activation energy and the current exponent have been determined accurately. Second, failure times ( Delta R/R sub(0)=10%) and values for sigma have been obtained by applying higher stress levels on a population of test lines. A combination of this two-step procedure with our high-resolution equipment yields a full characterisation of gold electromigration and a lifetime prediction with a significant higher accuracy and far less measurement time than using low resolution test systems. copyright 2001 Elsevier Science Ltd. All rights reserved.
doi_str_mv 10.1016/S0026-2714(01)00179-2
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