High-resolution in-situ study of gold electromigration: Test time reduction
The electromigration behaviour of a large set of gold interconnections is studied using the high-resolution in-situ measurement technique. First, initial resistance drifts ( Delta R/R sub(0)=0.1%) have been recorded on only one sample for each stress level in a broad matrix of stress levels. Using t...
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Veröffentlicht in: | Microelectronics and reliability 2001-09, Vol.41 (9-10), p.1439-1442 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | The electromigration behaviour of a large set of gold interconnections is studied using the high-resolution in-situ measurement technique. First, initial resistance drifts ( Delta R/R sub(0)=0.1%) have been recorded on only one sample for each stress level in a broad matrix of stress levels. Using these measurements, the activation energy and the current exponent have been determined accurately. Second, failure times ( Delta R/R sub(0)=10%) and values for sigma have been obtained by applying higher stress levels on a population of test lines. A combination of this two-step procedure with our high-resolution equipment yields a full characterisation of gold electromigration and a lifetime prediction with a significant higher accuracy and far less measurement time than using low resolution test systems. copyright 2001 Elsevier Science Ltd. All rights reserved. |
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ISSN: | 0026-2714 |
DOI: | 10.1016/S0026-2714(01)00179-2 |