Silicon Epitaxy on Si(100) with Adsorbed Oxygen

Silicon growth beyond a barrier structure consisting of 1 or 2 nm of silicon sandwiched between adjacent layers of adsorbed oxygen up to 100 langmuir of exposure is epitaxial and free of stacking faults as determined in high resolution X-ray transmission electron microscopy. The process has been repeated up to nine periods, forming a superlattice called the hetero-epilattice-superlattice. This development opens the door to the fabrication of a wide variety of electronic and optoelectronic structures, and possible application in silicon-on-insulator.