A high-speed, low-power SOI CMOS circuit with variable threshold voltages

We have proposed a high‐speed, low‐power CMOS circuit that controls the substrate voltage of the SOI MOSFET by the output voltage of a CMOS inverter circuit. This circuit operates at a power supply voltage of 1 V or lower with a nearly constant delay for rise times and fall times of the input signal...

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Veröffentlicht in:	Electronics & communications in Japan. Part 2, Electronics Electronics, 2001-05, Vol.84 (5), p.20-28
Hauptverfasser:	Higuchi, Hisayuki, Ikeda, Takahide
Format:	Artikel
Sprache:	eng
Schlagworte:	CMOS high-speed circuit low power consumption SOI
Online-Zugang:	Volltext
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