Early signatures for REDR-based laser degradations

The basic theory for Recombination Enhanced Defect Reaction (REDR) as responsible for sudden failures in 980 nm SL SQW InGaAs pump laser diodes is here tested on experimental constant-current life-test data. A link between the occurrence of long term sudden failures and early detectable signatures has been looked for. For a specific case, where the reacting defects may display saturation effects on their recombination efficiency, a possible screening method may be proposed, able to individuate the great majority of sudden failures at about 1000 hours by inspecting data at 20 hours.