Generation of far-infrared radiation in a frozen-wave photoswitched semiconductor structure
The generation of radiation in the far‐infrared (FIR) range by the interaction of a moving photoconducting front with an electrostatic “frozen‐wave” configuration in a semiconductor is considered. Numerical simulations of FIR generation are discussed using the estimations of semiconductor layer para...
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| Veröffentlicht in: | Microwave and optical technology letters 2001-11, Vol.31 (4), p.277-282 |
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| container_end_page | 282 |
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| container_issue | 4 |
| container_start_page | 277 |
| container_title | Microwave and optical technology letters |
| container_volume | 31 |
| creator | Scherbatko, Igor V. Nerukh, Alexander G. |
| description | The generation of radiation in the far‐infrared (FIR) range by the interaction of a moving photoconducting front with an electrostatic “frozen‐wave” configuration in a semiconductor is considered. Numerical simulations of FIR generation are discussed using the estimations of semiconductor layer parameters. © 2001 John Wiley & Sons, Inc. Microwave Opt Technol Lett 31: 277–282, 2001. |
| doi_str_mv | 10.1002/mop.10010 |
| format | Article |
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| ispartof | Microwave and optical technology letters, 2001-11, Vol.31 (4), p.277-282 |
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| language | eng |
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| source | Wiley Online Library Journals Frontfile Complete |
| subjects | electrodynamics far-infrared radiation numerical methods semiconductor structure transient |
| title | Generation of far-infrared radiation in a frozen-wave photoswitched semiconductor structure |
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