Generation of far-infrared radiation in a frozen-wave photoswitched semiconductor structure

Generation of far-infrared radiation in a frozen-wave photoswitched semiconductor structure

The generation of radiation in the far‐infrared (FIR) range by the interaction of a moving photoconducting front with an electrostatic “frozen‐wave” configuration in a semiconductor is considered. Numerical simulations of FIR generation are discussed using the estimations of semiconductor layer para...

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Veröffentlicht in:Microwave and optical technology letters 2001-11, Vol.31 (4), p.277-282
Hauptverfasser: Scherbatko, Igor V., Nerukh, Alexander G.
Format: Artikel
Sprache:eng
Schlagworte:
electrodynamics
far-infrared radiation
numerical methods
semiconductor structure
transient
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Zusammenfassung:The generation of radiation in the far‐infrared (FIR) range by the interaction of a moving photoconducting front with an electrostatic “frozen‐wave” configuration in a semiconductor is considered. Numerical simulations of FIR generation are discussed using the estimations of semiconductor layer parameters. © 2001 John Wiley & Sons, Inc. Microwave Opt Technol Lett 31: 277–282, 2001.
ISSN:0895-2477
1098-2760
DOI:10.1002/mop.10010