Ribbon growth on substrate (RGS) silicon solar cells with microwave-induced remote hydrogen plasma passivation and efficiencies exceeding 11

For the first time efficiencies above 11% for solar cells (4 cm 2) based on Bayer ribbon growth on substrate (RGS) crystalline silicon have been demonstrated including mechanical V-structuring of the front surface, aluminum-gettering, microwave-induced remote hydrogen plasma (MIRHP) passivation and PECVD SiN/SiO 2 double-layer antireflection coating. MIRHP alone resulted in absolute improvements in the open-circuit voltage of 27 mV, in the short-circuit current density of 2.8 mA cm −2 and in the cell efficiency of 1.9% leading to an open-circuit voltage of 538 mV and an efficiency of 11.1%.