Quantum efficiency and admittance spectroscopy on Cu(In,Ga)Se sub 2 solar cells

Quantum efficiency and admittance spectroscopy on Cu(In,Ga)Se sub 2 solar cells

We investigate the electronic transport properties of Cu(In,Ga)Se sub(2) solar cells by means of quantum efficiency and temperature dependent admittance spectroscopy. A simple evaluation scheme of quantum efficiency data is introduced which accounts for recombinatoric losses in the CdS buffer layer...

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Veröffentlicht in:Solar energy materials and solar cells 1998-01, Vol.50 (1-4), p.79-85
Hauptverfasser: Parisi, J, Hilburger, D, Schmitt, M, Ran, U
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creator Parisi, J
Hilburger, D
Schmitt, M
Ran, U
description We investigate the electronic transport properties of Cu(In,Ga)Se sub(2) solar cells by means of quantum efficiency and temperature dependent admittance spectroscopy. A simple evaluation scheme of quantum efficiency data is introduced which accounts for recombinatoric losses in the CdS buffer layer and in the Cu(In,Ga)Se sub(2) absorber. By admittance spectroscopy, we find that the controlled incorporation of Na into the absorber material leads to a shallow acceptor state at about 75 meV above the valence band.
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fullrecord <record><control><sourceid>proquest</sourceid><recordid>TN_cdi_proquest_miscellaneous_26739069</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>26739069</sourcerecordid><originalsourceid>FETCH-proquest_miscellaneous_267390693</originalsourceid><addsrcrecordid>eNqNyrsKwjAUgOEMCtbLO5xJFBRCWlo7F2-TiO7lmJ5CpE1qTzL07VXwAZz-4f9GIpK5yrZSJbuJmDI_pZQqjZNIXK4BrQ8tUF0bbcjqAdBWgFVrvEerCbgj7XvH2nUDOAtFWJ3t5ojr2-eFByhg12APmpqG52JcY8O0-HUmlof9vThtu969ArEvW8NfiZZc4FKlWZzLNI__hm8CqUB1</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>26739069</pqid></control><display><type>article</type><title>Quantum efficiency and admittance spectroscopy on Cu(In,Ga)Se sub 2 solar cells</title><source>Elsevier ScienceDirect Journals</source><creator>Parisi, J ; Hilburger, D ; Schmitt, M ; Ran, U</creator><creatorcontrib>Parisi, J ; Hilburger, D ; Schmitt, M ; Ran, U</creatorcontrib><description>We investigate the electronic transport properties of Cu(In,Ga)Se sub(2) solar cells by means of quantum efficiency and temperature dependent admittance spectroscopy. A simple evaluation scheme of quantum efficiency data is introduced which accounts for recombinatoric losses in the CdS buffer layer and in the Cu(In,Ga)Se sub(2) absorber. By admittance spectroscopy, we find that the controlled incorporation of Na into the absorber material leads to a shallow acceptor state at about 75 meV above the valence band.</description><identifier>ISSN: 0927-0248</identifier><language>eng</language><ispartof>Solar energy materials and solar cells, 1998-01, Vol.50 (1-4), p.79-85</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780</link.rule.ids></links><search><creatorcontrib>Parisi, J</creatorcontrib><creatorcontrib>Hilburger, D</creatorcontrib><creatorcontrib>Schmitt, M</creatorcontrib><creatorcontrib>Ran, U</creatorcontrib><title>Quantum efficiency and admittance spectroscopy on Cu(In,Ga)Se sub 2 solar cells</title><title>Solar energy materials and solar cells</title><description>We investigate the electronic transport properties of Cu(In,Ga)Se sub(2) solar cells by means of quantum efficiency and temperature dependent admittance spectroscopy. A simple evaluation scheme of quantum efficiency data is introduced which accounts for recombinatoric losses in the CdS buffer layer and in the Cu(In,Ga)Se sub(2) absorber. By admittance spectroscopy, we find that the controlled incorporation of Na into the absorber material leads to a shallow acceptor state at about 75 meV above the valence band.</description><issn>0927-0248</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1998</creationdate><recordtype>article</recordtype><recordid>eNqNyrsKwjAUgOEMCtbLO5xJFBRCWlo7F2-TiO7lmJ5CpE1qTzL07VXwAZz-4f9GIpK5yrZSJbuJmDI_pZQqjZNIXK4BrQ8tUF0bbcjqAdBWgFVrvEerCbgj7XvH2nUDOAtFWJ3t5ojr2-eFByhg12APmpqG52JcY8O0-HUmlof9vThtu969ArEvW8NfiZZc4FKlWZzLNI__hm8CqUB1</recordid><startdate>19980101</startdate><enddate>19980101</enddate><creator>Parisi, J</creator><creator>Hilburger, D</creator><creator>Schmitt, M</creator><creator>Ran, U</creator><scope>7SP</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>19980101</creationdate><title>Quantum efficiency and admittance spectroscopy on Cu(In,Ga)Se sub 2 solar cells</title><author>Parisi, J ; Hilburger, D ; Schmitt, M ; Ran, U</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-proquest_miscellaneous_267390693</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1998</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Parisi, J</creatorcontrib><creatorcontrib>Hilburger, D</creatorcontrib><creatorcontrib>Schmitt, M</creatorcontrib><creatorcontrib>Ran, U</creatorcontrib><collection>Electronics &amp; Communications Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Solar energy materials and solar cells</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Parisi, J</au><au>Hilburger, D</au><au>Schmitt, M</au><au>Ran, U</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Quantum efficiency and admittance spectroscopy on Cu(In,Ga)Se sub 2 solar cells</atitle><jtitle>Solar energy materials and solar cells</jtitle><date>1998-01-01</date><risdate>1998</risdate><volume>50</volume><issue>1-4</issue><spage>79</spage><epage>85</epage><pages>79-85</pages><issn>0927-0248</issn><abstract>We investigate the electronic transport properties of Cu(In,Ga)Se sub(2) solar cells by means of quantum efficiency and temperature dependent admittance spectroscopy. A simple evaluation scheme of quantum efficiency data is introduced which accounts for recombinatoric losses in the CdS buffer layer and in the Cu(In,Ga)Se sub(2) absorber. By admittance spectroscopy, we find that the controlled incorporation of Na into the absorber material leads to a shallow acceptor state at about 75 meV above the valence band.</abstract></addata></record>
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title Quantum efficiency and admittance spectroscopy on Cu(In,Ga)Se sub 2 solar cells
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-06T08%3A05%3A50IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Quantum%20efficiency%20and%20admittance%20spectroscopy%20on%20Cu(In,Ga)Se%20sub%202%20solar%20cells&rft.jtitle=Solar%20energy%20materials%20and%20solar%20cells&rft.au=Parisi,%20J&rft.date=1998-01-01&rft.volume=50&rft.issue=1-4&rft.spage=79&rft.epage=85&rft.pages=79-85&rft.issn=0927-0248&rft_id=info:doi/&rft_dat=%3Cproquest%3E26739069%3C/proquest%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=26739069&rft_id=info:pmid/&rfr_iscdi=true