Quantum efficiency and admittance spectroscopy on Cu(In,Ga)Se sub 2 solar cells

Quantum efficiency and admittance spectroscopy on Cu(In,Ga)Se sub 2 solar cells

We investigate the electronic transport properties of Cu(In,Ga)Se sub(2) solar cells by means of quantum efficiency and temperature dependent admittance spectroscopy. A simple evaluation scheme of quantum efficiency data is introduced which accounts for recombinatoric losses in the CdS buffer layer...

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Veröffentlicht in:Solar energy materials and solar cells 1998-01, Vol.50 (1-4), p.79-85
Hauptverfasser: Parisi, J, Hilburger, D, Schmitt, M, Ran, U
Format: Artikel
Sprache:eng
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Zusammenfassung:We investigate the electronic transport properties of Cu(In,Ga)Se sub(2) solar cells by means of quantum efficiency and temperature dependent admittance spectroscopy. A simple evaluation scheme of quantum efficiency data is introduced which accounts for recombinatoric losses in the CdS buffer layer and in the Cu(In,Ga)Se sub(2) absorber. By admittance spectroscopy, we find that the controlled incorporation of Na into the absorber material leads to a shallow acceptor state at about 75 meV above the valence band.
ISSN:0927-0248