Epitaxial single-crystal hexagonal boron nitride multilayers on Ni (111)

Large-area single-crystal monolayers of two-dimensional (2D) materials such as graphene 1 – 3 , hexagonal boron nitride (hBN) 4 – 6 and transition metal dichalcogenides 7 , 8 have been grown. hBN is considered to be the ‘ideal’ dielectric for 2D-materials-based field-effect transistors (FETs), offering the potential for extending Moore’s law 9 , 10 . Although hBN thicker than a monolayer is more desirable as substrate for 2D semiconductors 11 , 12 , highly uniform and single-crystal multilayer hBN growth has yet to be demonstrated. Here we report the epitaxial growth of wafer-scale single-crystal trilayer hBN by a chemical vapour deposition (CVD) method. Uniformly aligned hBN islands are found to grow on single-crystal Ni (111) at early stage and finally to coalesce into a single-crystal film. Cross-sectional transmission electron microscopy (TEM) results show that a Ni 23 B 6 interlayer is formed (during cooling) between the single-crystal hBN film and Ni substrate by boron dissolution in Ni. There are epitaxial relationships between hBN and Ni 23 B 6 and between Ni 23 B 6 and Ni. We also find that the hBN film acts as a protective layer that remains intact during catalytic evolution of hydrogen, suggesting continuous single-crystal hBN. This hBN transferred onto the SiO 2 (300 nm)/Si wafer acts as a dielectric layer to reduce electron doping from the SiO 2 substrate in MoS 2 FETs. Our results demonstrate high-quality single-crystal multilayered hBN over large areas, which should open up new pathways for making it a ubiquitous substrate for 2D semiconductors. Using a chemical vapour deposition method, it is possible to epitaxially grow wafer-scale single-crystal trilayers of hexagonal boron nitride—an important dielectric for 2D materials—on Ni (111) foils by boron dissolution.