Ideal and possible experiments for further progress on dislocation mobility in silicon

This note speculates about the feasibility of new experiments on dislocation mobility in silicon designed (i) to detect the predicted effect of varying the dissociation width on the average velocity and (ii) to gain a better accuracy on the possible change between forward and backward motion upon st...

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Veröffentlicht in:	Scripta materialia 2001-12, Vol.45 (11), p.1279-1285
Hauptverfasser:	Jacques, Alain, George, Amand
Format:	Artikel
Sprache:	eng
Schlagworte:	Dislocation mobility Elemental semiconductors Silicon
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creator	Jacques, Alain George, Amand
description	This note speculates about the feasibility of new experiments on dislocation mobility in silicon designed (i) to detect the predicted effect of varying the dissociation width on the average velocity and (ii) to gain a better accuracy on the possible change between forward and backward motion upon stress reversal.
doi_str_mv	10.1016/S1359-6462(01)01162-9
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language	eng
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source	ScienceDirect Journals (5 years ago - present)
subjects	Dislocation mobility Elemental semiconductors Silicon
title	Ideal and possible experiments for further progress on dislocation mobility in silicon
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