Ideal and possible experiments for further progress on dislocation mobility in silicon

This note speculates about the feasibility of new experiments on dislocation mobility in silicon designed (i) to detect the predicted effect of varying the dissociation width on the average velocity and (ii) to gain a better accuracy on the possible change between forward and backward motion upon st...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Scripta materialia 2001-12, Vol.45 (11), p.1279-1285
Hauptverfasser: Jacques, Alain, George, Amand
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:This note speculates about the feasibility of new experiments on dislocation mobility in silicon designed (i) to detect the predicted effect of varying the dissociation width on the average velocity and (ii) to gain a better accuracy on the possible change between forward and backward motion upon stress reversal.
ISSN:1359-6462
1872-8456
DOI:10.1016/S1359-6462(01)01162-9