Electrically tunable quantum confinement of neutral excitons

Confining particles to distances below their de Broglie wavelength discretizes their motional state. This fundamental effect is observed in many physical systems, ranging from electrons confined in atoms or quantum dots 1 , 2 to ultracold atoms trapped in optical tweezers 3 , 4 . In solid-state photonics, a long-standing goal has been to achieve fully tunable quantum confinement of optically active electron–hole pairs, known as excitons. To confine excitons, existing approaches mainly rely on material modulation 5 , which suffers from poor control over the energy and position of trapping potentials. This has severely impeded the engineering of large-scale quantum photonic systems. Here we demonstrate electrically controlled quantum confinement of neutral excitons in 2D semiconductors. By combining gate-defined in-plane electric fields with inherent interactions between excitons and free charges in a lateral p–i–n junction, we achieve exciton confinement below 10 nm. Quantization of excitonic motion manifests in the measured optical response as a ladder of discrete voltage-dependent states below the continuum. Furthermore, we observe that our confining potentials lead to a strong modification of the relative wave function of excitons. Our technique provides an experimental route towards creating scalable arrays of identical single-photon sources and has wide-ranging implications for realizing strongly correlated photonic phases 6 , 7 and on-chip optical quantum information processors 8 , 9 . Electrically controlled quantum confinement of excitons to below 10 nm is achieved in a 2D semiconductor by combining in-plane electric fields with interactions between excitons and free charges.