CISCuT absorber layers — the present model of thin film growth

Experimental results and numeric calculations that have been contributed to a better understanding of how layer growth proceeds in the CISCuT process are given in this work. The heat transfer resistance between the heater and copper tape has been found to mainly determine the temperature of the copp...

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Veröffentlicht in:	Thin solid films 2001-05, Vol.387 (1), p.86-88
Hauptverfasser:	Winkler, M., Griesche, J., Tober, O., Penndorf, J., Blechschmied, E., Szulzewsky, K.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences CISCuT Cross-disciplinary physics: materials science rheology CuIn 5S 8 CuInS 2 Energy Exact sciences and technology Heat transfer Layer growth Materials science Methods of deposition of films and coatings film growth and epitaxy Natural energy Photoelectric conversion: solar cells and arrays Photovoltaic conversion Physics Solar cells. Photoelectrochemical cells Solar energy Theory and models of film growth
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Beschreibung
Zusammenfassung:	Experimental results and numeric calculations that have been contributed to a better understanding of how layer growth proceeds in the CISCuT process are given in this work. The heat transfer resistance between the heater and copper tape has been found to mainly determine the temperature of the copper tape during the CISCuT process. From this, more insight into the strongly temperature-dependent precursor formation has been gathered. The initial layer growth model of CISCuT absorber layer growth will be described and the partial solubility of CuInS 2 in CuIn-melts has been taken into account. Tape-like CISCuT-based solar cells, with a best efficiency of 5.4% achieved so far on an area of 4 cm 2, are presented.
ISSN:	0040-6090 1879-2731
DOI:	10.1016/S0040-6090(00)01721-1