Compact Modeling Technology for the Simulation of Integrated Circuits Based on Graphene Field‐Effect Transistors

The progress made toward the definition of a modular compact modeling technology for graphene field‐effect transistors (GFETs) that enables the electrical analysis of arbitrary GFET‐based integrated circuits is reported. A set of primary models embracing the main physical principles defines the ideal GFET response under DC, transient (time domain), AC (frequency domain), and noise (frequency domain) analysis. Another set of secondary models accounts for the GFET non‐idealities, such as extrinsic‐, short‐channel‐, trapping/detrapping‐, self‐heating‐, and non‐quasi static‐effects, which can have a significant impact under static and/or dynamic operation. At both device and circuit levels, significant consistency is demonstrated between the simulation output and experimental data for relevant operating conditions. Additionally, a perspective of the challenges during the scale up of the GFET modeling technology toward higher technology readiness levels while drawing a collaborative scenario among fabrication technology groups, modeling groups, and circuit designers, is provided. The progress made toward the development of a modular compact modeling technology for graphene field‐effect transistors under DC, transient, AC, and noise analysis, is reported. This includes non‐idealities such as extrinsic‐, short‐channel‐, traps‐, self‐heating‐, and non‐quasi‐static‐effects. An overview of the challenges ahead in graphene transistor modeling to enable computer‐aided circuit design is also provided.