Creep behaviour of MoSi2-SiC and MoSi2-HfO2

Creep resistance of two MoSi2-based materials containing SiC and HfO2 particles, respectively, in ambient atmosphere was studied in the temperature range 1100-1400 C under a load of 100 MPa. The microstructure and its response to high-temperature load were investigated by TEM using the thin foil tec...

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Veröffentlicht in:	Materials letters 2001-12, Vol.51 (6), p.485-489
Hauptverfasser:	HVIZDOS, Pavol, BESTERCI, Michal, BALLOKOVA, Beata, SCHOLL, Roland, BÖHM, Alexander
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: structure, mechanical and thermal properties Creep Exact sciences and technology Mechanical and acoustical properties of condensed matter Mechanical properties of solids Physics
Online-Zugang:	Volltext
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Zusammenfassung:	Creep resistance of two MoSi2-based materials containing SiC and HfO2 particles, respectively, in ambient atmosphere was studied in the temperature range 1100-1400 C under a load of 100 MPa. The microstructure and its response to high-temperature load were investigated by TEM using the thin foil technique. Comparison of the creep resistance of both materials at each testing temperature showed that the performance of MoSi2-HfO2 was about one order of magnitude better than the MoSi2-SiC material. 16 refs.
ISSN:	0167-577X 1873-4979
DOI:	10.1016/S0167-577X(01)00340-8