Modeling Analysis of Temperature Field and Species Transport Inside the System for Sublimation Growth of SiC in Tantalum Container

An analysis of quantities determining growth rate and shape of crystallization front during sublimation growth of bulk SiC crystals is presented. It is shown that accurate modeling of global heat transfer with taking into account details of the design of the growth system is necessary. The effect of extremely low heat conductivity of the SiC powder is discussed. It is shown that an increase of the size of the crystal and a decrease of the volume of the source during the growth of bulk crystals results in a variation of the temperature distribution inside the crucible. A new model of species transport during sublimation growth of bulk SiC crystals is proposed which takes into account Stephan flow. (Author)