Manufacture of AlGaInP visible light-emitting diodes by MOCVD & VPE

The whole structure of ultrahigh brightness AlGaInP LEDs dice has been researched and designed. The AlGaInP double heterostructure are grown on n-GaAs substrate by low-pressure metalorganic chemical vapor deposition (MOCVD) using EMCORE MOCVD system. After growing the p-GaP window layer for current spreading on top of AlGaInP DH layers by hydride vapor phase epitaxy (VPE), the original GaAs substrate is selectively removed via mechanical–chemical etching method and n-GaP substrate is grown by hydride VPE in its place. The result shows that the external quantum efficiency of p-GaP/AlGaInP(DH)/ n-GaP (substrate) LEDs dice at a forward current of 20 mA and at a room temperature of 300 K is ≥10%. It is about two times higher than the conventional dice with absorbing GaAs substrate.