Peculiarities of defect generation in Si +-implanted GaAs (2 1 1)

Peculiarities of defect generation in Si +-implanted GaAs (2 1 1)

Peculiarities of the defect generation during implantation of (2 1 1) GaAs with Si + ions and doses below the amorphisation dose of GaAs have been investigated by X-ray diffraction, the secondary ion mass-spectroscopy (SIMS) and transmission electron microscopy. It was shown, that in such implanted...

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Veröffentlicht in:Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Beam interactions with materials and atoms, 1999, Vol.147 (1), p.187-190
Hauptverfasser: Bublik, V.T., Evgeniev, S.B., Ivanov, S.P., Kalinin, A.A., Milvidskii, M.G., Nemirovskii, A.W.
Format: Artikel
Sprache:eng
Schlagworte:
Annealing
Defect
Implantation
Structure
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Zusammenfassung:Peculiarities of the defect generation during implantation of (2 1 1) GaAs with Si + ions and doses below the amorphisation dose of GaAs have been investigated by X-ray diffraction, the secondary ion mass-spectroscopy (SIMS) and transmission electron microscopy. It was shown, that in such implanted layers less radiation defects will be formed and these defects are more easily annealed by rapid photon annealing (RPA) than in (1 0 0)-oriented wafers.
ISSN:0168-583X
1872-9584
DOI:10.1016/S0168-583X(98)00604-1