Breakdown Voltage Improvement of p‐LDMOSFET with an Uneven Racetrack Source for PDP Driver IC Applications

Breakdown Voltage Improvement of p‐LDMOSFET with an Uneven Racetrack Source for PDP Driver IC Applications

We investigated the electrical characteristics of p‐channel double‐diffused MOSFETs (p‐LDMOSFETs) with an uneven racetrack source (URS) and a conventional racetrack source (CRS) for PDP driver IC applications. The breakdown voltage of the p‐LDMOSFET with the URS in off‐state was nearly the same as t...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:ETRI journal 2002-08, Vol.24 (4), p.328-331
Hauptverfasser: Roh, Tae Moon, Lee, Dae Woo, Yang, Yil Suk, Koo, Jin Gun, Kim, Jongdae
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Display
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:We investigated the electrical characteristics of p‐channel double‐diffused MOSFETs (p‐LDMOSFETs) with an uneven racetrack source (URS) and a conventional racetrack source (CRS) for PDP driver IC applications. The breakdown voltage of the p‐LDMOSFET with the URS in off‐state was nearly the same as the p‐LDMOSFET with the CRS. However, the breakdown voltage of the p‐LDMOSFET with the URS in on‐state was about 30% higher than that of the p‐LDMOSFET with the CRS, while the saturated drain current of the p‐LDMOSFET with the URS was only about 4% lower than that of the p‐LDMOSFET with the CRS.
ISSN:1225-6463
2233-7326
DOI:10.4218/etrij.02.0202.0402