Challenge of ashing and cleaning on SiOC-H dielectric: characterization and main issues

Challenge of ashing and cleaning on SiOC-H dielectric: characterization and main issues

During process development of post etch cleaning for dual damascene copper/SiOC-H structures, two different kinds of new problems were faced. While a good efficiency is obviously still needed, attention must also be given to dielectric modification and photoresist poisoning which can be induced by t...

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Veröffentlicht in:Microelectronic engineering 2002-07, Vol.61, p.867-874
Hauptverfasser: Louveau, O., Louis, D., Assous, M., Blanc, R., Brun, P., Lamy, S., Lajoinie, E.
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Ashing
Cleaning
Copper
Electronics
Exact sciences and technology
Low- k
Microelectronic fabrication (materials and surfaces technology)
Resist poisoning
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Zusammenfassung:During process development of post etch cleaning for dual damascene copper/SiOC-H structures, two different kinds of new problems were faced. While a good efficiency is obviously still needed, attention must also be given to dielectric modification and photoresist poisoning which can be induced by the cleaning processes. This study examines different ways of characterization of these phenomenon.
ISSN:0167-9317
1873-5568
DOI:10.1016/S0167-9317(02)00486-0