Monolithic CMOS digital integrated circuits in 6H-SiC using an implanted p-well process
We report the first p-well Complementary Metal Oxide Semiconductor (CMOS) digital integrated circuits in 6H-SiC. Enhancement mode NMOSFET's and PMOSFET's are fabricated on implanted p-wells and n-type epilayers, respectively. CMOS logic circuits such as inverters, NAND, NOR, XOR, flip-flop...
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| Veröffentlicht in: | IEEE electron device letters 1997-05, Vol.18 (5), p.194-196 |
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| container_end_page | 196 |
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| container_issue | 5 |
| container_start_page | 194 |
| container_title | IEEE electron device letters |
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| creator | Ryu, S. Kornegay, K.T. Cooper, J.A. Melloch, M.R. |
| description | We report the first p-well Complementary Metal Oxide Semiconductor (CMOS) digital integrated circuits in 6H-SiC. Enhancement mode NMOSFET's and PMOSFET's are fabricated on implanted p-wells and n-type epilayers, respectively. CMOS logic circuits such as inverters, NAND, NOR, XOR, flip-flops, half adders, and 11-stage ring oscillators are implemented using these devices and operated at room temperature, The inverters show stable operation at room temperature and 300/spl deg/C with V/sub dd/=10 and 15 V. |
| doi_str_mv | 10.1109/55.568759 |
| format | Article |
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Enhancement mode NMOSFET's and PMOSFET's are fabricated on implanted p-wells and n-type epilayers, respectively. 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Enhancement mode NMOSFET's and PMOSFET's are fabricated on implanted p-wells and n-type epilayers, respectively. CMOS logic circuits such as inverters, NAND, NOR, XOR, flip-flops, half adders, and 11-stage ring oscillators are implemented using these devices and operated at room temperature, The inverters show stable operation at room temperature and 300/spl deg/C with V/sub dd/=10 and 15 V.</description><subject>Annealing</subject><subject>CMOS digital integrated circuits</subject><subject>CMOS logic circuits</subject><subject>CMOS process</subject><subject>CMOS technology</subject><subject>Implants</subject><subject>Inverters</subject><subject>MOS devices</subject><subject>MOSFET circuits</subject><subject>Temperature</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1997</creationdate><recordtype>article</recordtype><recordid>eNqNkU1Lw0AQhhdRsFYPXj3tSfCwdTb7fZSgVmjpoYrHsNls6kqaxGyC-O9NiXjuaWDm4ZkXXoSuKSwoBXMvxEJIrYQ5QTMqhCYgJDtFM1CcEkZBnqOLGD8BKOeKz9D7uqmbKvQfweF0vdniIuxCbysc6t7vOtv7ArvQuSH0cdxhuSTbkOIhhnqHbY3Dvq1sfaBa8u2rCrdd43yMl-istFX0V39zjt6eHl_TJVltnl_ShxVxHERPCqlN4qV2TuZApYZcKQoWxtTWK14wLZxirkxUkec6V1orwwvDpQKjaJmwObqdvOPfr8HHPtuH6MYgtvbNELNEG5loEEeATCuQRxilMIaJg_FuAl3XxNj5Mmu7sLfdT0YhO5SRCZFNZYzszcQG7_0_93f8BXPqgnY</recordid><startdate>19970501</startdate><enddate>19970501</enddate><creator>Ryu, S.</creator><creator>Kornegay, K.T.</creator><creator>Cooper, J.A.</creator><creator>Melloch, M.R.</creator><general>IEEE</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>19970501</creationdate><title>Monolithic CMOS digital integrated circuits in 6H-SiC using an implanted p-well process</title><author>Ryu, S. ; Kornegay, K.T. ; Cooper, J.A. ; Melloch, M.R.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c405t-d6892e68cc6b01680b7710a0056ae74d385c73cf27dbb8b788794d94670971f23</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1997</creationdate><topic>Annealing</topic><topic>CMOS digital integrated circuits</topic><topic>CMOS logic circuits</topic><topic>CMOS process</topic><topic>CMOS technology</topic><topic>Implants</topic><topic>Inverters</topic><topic>MOS devices</topic><topic>MOSFET circuits</topic><topic>Temperature</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ryu, S.</creatorcontrib><creatorcontrib>Kornegay, K.T.</creatorcontrib><creatorcontrib>Cooper, J.A.</creatorcontrib><creatorcontrib>Melloch, M.R.</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Ryu, S.</au><au>Kornegay, K.T.</au><au>Cooper, J.A.</au><au>Melloch, M.R.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Monolithic CMOS digital integrated circuits in 6H-SiC using an implanted p-well process</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>1997-05-01</date><risdate>1997</risdate><volume>18</volume><issue>5</issue><spage>194</spage><epage>196</epage><pages>194-196</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract>We report the first p-well Complementary Metal Oxide Semiconductor (CMOS) digital integrated circuits in 6H-SiC. 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| ispartof | IEEE electron device letters, 1997-05, Vol.18 (5), p.194-196 |
| issn | 0741-3106 1558-0563 |
| language | eng |
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| source | IEEE Electronic Library (IEL) |
| subjects | Annealing CMOS digital integrated circuits CMOS logic circuits CMOS process CMOS technology Implants Inverters MOS devices MOSFET circuits Temperature |
| title | Monolithic CMOS digital integrated circuits in 6H-SiC using an implanted p-well process |
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