Monolithic CMOS digital integrated circuits in 6H-SiC using an implanted p-well process

Monolithic CMOS digital integrated circuits in 6H-SiC using an implanted p-well process

We report the first p-well Complementary Metal Oxide Semiconductor (CMOS) digital integrated circuits in 6H-SiC. Enhancement mode NMOSFET's and PMOSFET's are fabricated on implanted p-wells and n-type epilayers, respectively. CMOS logic circuits such as inverters, NAND, NOR, XOR, flip-flop...

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Veröffentlicht in:IEEE electron device letters 1997-05, Vol.18 (5), p.194-196
Hauptverfasser: Ryu, S., Kornegay, K.T., Cooper, J.A., Melloch, M.R.
Format: Artikel
Sprache:eng
Schlagworte:
Annealing
CMOS digital integrated circuits
CMOS logic circuits
CMOS process
CMOS technology
Implants
Inverters
MOS devices
MOSFET circuits
Temperature
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Beschreibung
Zusammenfassung:We report the first p-well Complementary Metal Oxide Semiconductor (CMOS) digital integrated circuits in 6H-SiC. Enhancement mode NMOSFET's and PMOSFET's are fabricated on implanted p-wells and n-type epilayers, respectively. CMOS logic circuits such as inverters, NAND, NOR, XOR, flip-flops, half adders, and 11-stage ring oscillators are implemented using these devices and operated at room temperature, The inverters show stable operation at room temperature and 300/spl deg/C with V/sub dd/=10 and 15 V.
ISSN:0741-3106
1558-0563
DOI:10.1109/55.568759