Structural characteristics of as-deposited and crystallized mixed-phase silicon films

Silicon depositions are performed in a conventional, hot-wall, tubular low-pressure CVD reactor utilizing 20% silane in nitrogen as the source gas. Mixed phase films consist of crystallites embedded in an amorphous matrix. Mixed-phase films can crystallize in a much shorter time than as-deposited am...

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Veröffentlicht in:Journal of Electronic Materials 1994-03, Vol.23 (3), p.319-330
Hauptverfasser: VOUTSAS, A. T, HATALIS, M. K
Format: Artikel
Sprache:eng
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Zusammenfassung:Silicon depositions are performed in a conventional, hot-wall, tubular low-pressure CVD reactor utilizing 20% silane in nitrogen as the source gas. Mixed phase films consist of crystallites embedded in an amorphous matrix. Mixed-phase films can crystallize in a much shorter time than as-deposited amorphous films, due to the combination of the growth of the preexisting crystallites and the higher nucleation rate of new crystallites within the amorphous matrix of the mixed-phase film. The structure of both as-deposited and crystallized single and composite mixed-phase films is found to be identical for films deposited on both oxidized silicon and Corning Code 1735 glass substrates.
ISSN:0361-5235
1543-186X
DOI:10.1007/bf02670642