Structural characteristics of as-deposited and crystallized mixed-phase silicon films
Silicon depositions are performed in a conventional, hot-wall, tubular low-pressure CVD reactor utilizing 20% silane in nitrogen as the source gas. Mixed phase films consist of crystallites embedded in an amorphous matrix. Mixed-phase films can crystallize in a much shorter time than as-deposited am...
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Veröffentlicht in: | Journal of Electronic Materials 1994-03, Vol.23 (3), p.319-330 |
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Hauptverfasser: | , |
Format: | Artikel |
Sprache: | eng |
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Online-Zugang: | Volltext |
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Zusammenfassung: | Silicon depositions are performed in a conventional, hot-wall, tubular low-pressure CVD reactor utilizing 20% silane in nitrogen as the source gas. Mixed phase films consist of crystallites embedded in an amorphous matrix. Mixed-phase films can crystallize in a much shorter time than as-deposited amorphous films, due to the combination of the growth of the preexisting crystallites and the higher nucleation rate of new crystallites within the amorphous matrix of the mixed-phase film. The structure of both as-deposited and crystallized single and composite mixed-phase films is found to be identical for films deposited on both oxidized silicon and Corning Code 1735 glass substrates. |
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ISSN: | 0361-5235 1543-186X |
DOI: | 10.1007/bf02670642 |