Densification and Grain Growth Kinetic for Silicon Nitride

The densification behavior of a silicon nitride ceramic was studied using dilatometer tests. Some of the variables tested were the heating rate, the soaking temperature, and the soaking time. The microstructure development during sintering was simultaneosuly studied. It is found that, for sintering...

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Veröffentlicht in:Key engineering materials 1997-04, Vol.132-136 (2), p.892-895
Hauptverfasser: Bernard-Granger, Guillaume, L'Amoulen, Réjane, Yeckley, Russell Lee
Format: Artikel
Sprache:eng
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Zusammenfassung:The densification behavior of a silicon nitride ceramic was studied using dilatometer tests. Some of the variables tested were the heating rate, the soaking temperature, and the soaking time. The microstructure development during sintering was simultaneosuly studied. It is found that, for sintering temperatures above 1780 C, a strong increase in the activation energy in the width direction could be related to the occurrence of abnormal grain growth in the material. (AIAA)
ISSN:1013-9826
1662-9795
1662-9795
DOI:10.4028/www.scientific.net/KEM.132-136.892