Electronic sputtering and desorption effects in TOF-SIMS studies using slow highly charged ions like Au(69+)

Electronic sputtering and desorption effects in TOF-SIMS studies using slow highly charged ions like Au(69+)

Secondary ion yields from highly oriented pyrolytic graphite (HOPG) and SiO2 (native oxide on float zone silicon) targets at impact of slow, highly charged ions like Th(70+) have been measured by time-of-flight SIMS. A direct comparison of collisional and electronic effects in secondary ion producti...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Materials science forum 1997-01, p.413-417
Hauptverfasser: Schenkel, T, Briere, M A, Schmidt-Boecking, H, Bethge, K, Schneider, D
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Secondary ion yields from highly oriented pyrolytic graphite (HOPG) and SiO2 (native oxide on float zone silicon) targets at impact of slow, highly charged ions like Th(70+) have been measured by time-of-flight SIMS. A direct comparison of collisional and electronic effects in secondary ion production using a beam of charge-state-equilibrated 300-keV Xe(1+) shows a secondary ion yield increase by a factor of not less than 100. (Author)
ISSN:0255-5476