Synthesis and characterization of porous polymeric low dielectric constant films
This paper reports the synthesis and dielectric properties of a porous poly(arylether) material with an ultra-low dielectric constant for interlayer dielectric applications in microelectronics. The porous polymer films were successfully fabricated by a method of organic phase separation and evaporat...
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| Veröffentlicht in: | Journal of electronic materials 2001-04, Vol.30 (4), p.309-313 |
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| creator | YUHUAN XU ZHENG, D. W TUNG, C. H YIPIN TSAI TU, K. N ZHAO, B. I. N LIU, Q.-Z BRONGO, Maureen ONG, Chung W. O CHUNG LOONG CHOY SHENG, George T. T |
| description | This paper reports the synthesis and dielectric properties of a porous poly(arylether) material with an ultra-low dielectric constant for interlayer dielectric applications in microelectronics. The porous polymer films were successfully fabricated by a method of organic phase separation and evaporation. A dielectric constant k of 1.8 was achieved for a porous film with an estimated porosity of 40% and average pore size of 3 nm. Electrical and mechanical properties as well as coefficient of thermal expansion for both dense and porous polymer films were measured. |
| doi_str_mv | 10.1007/s11664-001-0036-9 |
| format | Article |
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W ; TUNG, C. H ; YIPIN TSAI ; TU, K. N ; ZHAO, B. I. N ; LIU, Q.-Z ; BRONGO, Maureen ; ONG, Chung W. O ; CHUNG LOONG CHOY ; SHENG, George T. T</creator><creatorcontrib>YUHUAN XU ; ZHENG, D. W ; TUNG, C. H ; YIPIN TSAI ; TU, K. N ; ZHAO, B. I. N ; LIU, Q.-Z ; BRONGO, Maureen ; ONG, Chung W. O ; CHUNG LOONG CHOY ; SHENG, George T. T</creatorcontrib><description>This paper reports the synthesis and dielectric properties of a porous poly(arylether) material with an ultra-low dielectric constant for interlayer dielectric applications in microelectronics. The porous polymer films were successfully fabricated by a method of organic phase separation and evaporation. A dielectric constant k of 1.8 was achieved for a porous film with an estimated porosity of 40% and average pore size of 3 nm. Electrical and mechanical properties as well as coefficient of thermal expansion for both dense and porous polymer films were measured.</description><identifier>ISSN: 0361-5235</identifier><identifier>EISSN: 1543-186X</identifier><identifier>DOI: 10.1007/s11664-001-0036-9</identifier><identifier>CODEN: JECMA5</identifier><language>eng</language><publisher>New York, NY: Institute of Electrical and Electronics Engineers</publisher><subject>Applied sciences ; Chemical synthesis ; Dielectric properties ; Electronics ; Exact sciences and technology ; Interfaces ; Interlayers ; Mechanical properties ; Microelectronic fabrication (materials and surfaces technology) ; Permittivity ; Phase separation ; Polymer films ; Polymers ; Pore size ; Porosity ; Porous materials ; Semiconductor electronics. Microelectronics. Optoelectronics. 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| subjects | Applied sciences Chemical synthesis Dielectric properties Electronics Exact sciences and technology Interfaces Interlayers Mechanical properties Microelectronic fabrication (materials and surfaces technology) Permittivity Phase separation Polymer films Polymers Pore size Porosity Porous materials Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Thermal expansion |
| title | Synthesis and characterization of porous polymeric low dielectric constant films |
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