Synthesis and characterization of porous polymeric low dielectric constant films

This paper reports the synthesis and dielectric properties of a porous poly(arylether) material with an ultra-low dielectric constant for interlayer dielectric applications in microelectronics. The porous polymer films were successfully fabricated by a method of organic phase separation and evaporat...

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Veröffentlicht in:Journal of electronic materials 2001-04, Vol.30 (4), p.309-313
Hauptverfasser: YUHUAN XU, ZHENG, D. W, TUNG, C. H, YIPIN TSAI, TU, K. N, ZHAO, B. I. N, LIU, Q.-Z, BRONGO, Maureen, ONG, Chung W. O, CHUNG LOONG CHOY, SHENG, George T. T
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Sprache:eng
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Zusammenfassung:This paper reports the synthesis and dielectric properties of a porous poly(arylether) material with an ultra-low dielectric constant for interlayer dielectric applications in microelectronics. The porous polymer films were successfully fabricated by a method of organic phase separation and evaporation. A dielectric constant k of 1.8 was achieved for a porous film with an estimated porosity of 40% and average pore size of 3 nm. Electrical and mechanical properties as well as coefficient of thermal expansion for both dense and porous polymer films were measured.
ISSN:0361-5235
1543-186X
DOI:10.1007/s11664-001-0036-9