Femtosecond dephasing in porous silicon

Femtosecond dephasing in porous silicon

We have performed non-degenerate four-wave mixing on free-standing porous Si samples. Within the framework of an idealized inhomogeneously broadened two-level system, values of 20 fs for the dephasing time are obtained for different porosities. Fast energy relaxation times are found in the range 1.5...

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Veröffentlicht in:Thin solid films 1997-04, Vol.297 (1), p.135-137
Hauptverfasser: Moniatte, J, Hönerlage, B, Lévy, R, Tomasiunas, R, Pelant, I
Format: Artikel
Sprache:eng
Schlagworte:
Dephasing time
Non-linear spectroscopy
Porous silicon
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Zusammenfassung:We have performed non-degenerate four-wave mixing on free-standing porous Si samples. Within the framework of an idealized inhomogeneously broadened two-level system, values of 20 fs for the dephasing time are obtained for different porosities. Fast energy relaxation times are found in the range 1.5–3.5 ps for 64–73% porosities, respectively. They are attributed to carrier thermalization within the band tails, originating from porous silicon nanocrystallites and their surface states. © 1997 Elsevier Science S.A.
ISSN:0040-6090
1879-2731
DOI:10.1016/S0040-6090(96)09535-1