Fabrication and magnetoconductance studies on submicron wires and films of MBE grown CdTe:In
Epitaxial CdTe:In films of the thickness down to 0.1 μm were grown and doped by MBE. The carrier concentration was controlled in the range from 8 × 10 14 to 2 × 10 18 cm −3 by varying the In flux. Free standing, conducting wires with the linewidth down to 0.3 μm were fabricated by means of electron-...
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Veröffentlicht in: | Thin solid films 1997-09, Vol.306 (2), p.291-295 |
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Hauptverfasser: | , , , , , , , , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Epitaxial CdTe:In films of the thickness down to 0.1 μm were grown and doped by MBE. The carrier concentration was controlled in the range from 8 × 10
14 to 2 × 10
18 cm
−3 by varying the In flux. Free standing, conducting wires with the linewidth down to 0.3 μm were fabricated by means of electron-beam lithography followed by wet etching, and visualized by means of scanning-electron and atomic-force microscopies. Magnetoresistance measurements of the films and wires were carried out at temperatures down to 60 mK. A comparison of the data with theoretical predictions for the magnetoconductance in the weakly localized regime demonstrated the presence of temperature-induced dimensional crossovers in the studied structures. The electron phase-coherence length was determined for 1, 2, and 3 dimensional systems and showed to be limited by electron-electron interactions. |
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ISSN: | 0040-6090 1879-2731 |
DOI: | 10.1016/S0040-6090(97)00285-X |