Fabrication and magnetoconductance studies on submicron wires and films of MBE grown CdTe:In

Epitaxial CdTe:In films of the thickness down to 0.1 μm were grown and doped by MBE. The carrier concentration was controlled in the range from 8 × 10 14 to 2 × 10 18 cm −3 by varying the In flux. Free standing, conducting wires with the linewidth down to 0.3 μm were fabricated by means of electron-...

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Veröffentlicht in:Thin solid films 1997-09, Vol.306 (2), p.291-295
Hauptverfasser: Jaroszyński, J., Wróbel, J., Nowakowski, R., Duś, R., Papis, E., Kamińska, E., Piotrowska, A., Karczewski, G., Wojtowicz, T., Sawicki, M., Skośkiewicz, T., Dietl, T.
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Sprache:eng
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Zusammenfassung:Epitaxial CdTe:In films of the thickness down to 0.1 μm were grown and doped by MBE. The carrier concentration was controlled in the range from 8 × 10 14 to 2 × 10 18 cm −3 by varying the In flux. Free standing, conducting wires with the linewidth down to 0.3 μm were fabricated by means of electron-beam lithography followed by wet etching, and visualized by means of scanning-electron and atomic-force microscopies. Magnetoresistance measurements of the films and wires were carried out at temperatures down to 60 mK. A comparison of the data with theoretical predictions for the magnetoconductance in the weakly localized regime demonstrated the presence of temperature-induced dimensional crossovers in the studied structures. The electron phase-coherence length was determined for 1, 2, and 3 dimensional systems and showed to be limited by electron-electron interactions.
ISSN:0040-6090
1879-2731
DOI:10.1016/S0040-6090(97)00285-X