Novel amorphous-silicon-based light converter

A novel amorphous-silicon-based light converter has been developed. The device consists of an amorphous-silicon pin diode as the input-light sensing unit and a GaAsP light-emitting diode (LED) as the light-emitting unit. With appropriate selection of the i-a-Si:H layer thickness, the device can conv...

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Veröffentlicht in:	Japanese Journal of Applied Physics 1994-05, Vol.33 (5A), p.L646-L648
Hauptverfasser:	Fang, Yeau-Keuen, Lee, Kuen-Hsien, Kuo, Yaw-Jou Yang
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Electronics Exact sciences and technology Optoelectronic devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Beschreibung
Zusammenfassung:	A novel amorphous-silicon-based light converter has been developed. The device consists of an amorphous-silicon pin diode as the input-light sensing unit and a GaAsP light-emitting diode (LED) as the light-emitting unit. With appropriate selection of the i-a-Si:H layer thickness, the device can convert UV and visible light into red light. The key features of the device are low cost and simplicity of the preparation process. In this letter, the design, operation, fabrication, and measurements of the device have been described in detail.
ISSN:	0021-4922 1347-4065
DOI:	10.1143/jjap.33.l646