Anisotropy of Porous Anodization of Aluminum for VLSI Technology

Planarity and control of the configuration of the cross-sectional area are important parameters to be considered for high density VLSI devices. The anodization process seems best to fulfill such conditions, but anisotropy (i.e. difference in vertical and lateral anodization rates), must be increased...

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Veröffentlicht in:Journal of the Electrochemical Society 1994-09, Vol.141 (9), p.2556-2559
Hauptverfasser: Lazarouk, S., Baranov, I., Maiello, G., Proverbio, E., De Cesare, G., Ferrari, A.
Format: Artikel
Sprache:eng
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Zusammenfassung:Planarity and control of the configuration of the cross-sectional area are important parameters to be considered for high density VLSI devices. The anodization process seems best to fulfill such conditions, but anisotropy (i.e. difference in vertical and lateral anodization rates), must be increased to obtain a competitive technique. In this work factors affecting the anisotropy of the Al anodization process were investigated. By varying the electrochemical process parameters, a degree of anisotropy of approx0.6 was obtained. The dimensions of the Al porous oxide were determined by scanning electron microscopy. At high forming voltages, the electric field across the barrier layer of the porous oxide cells were calculated and plotted.
ISSN:0013-4651
1945-7111
DOI:10.1149/1.2055161