Chemical vapor deposition of copper thin films using new organometallic precursors with alkoxysilylolefin ligands

Two new organometallic precursors (hfac)Cu(L), where hfac= hexafluoroacetylacetonate, (I): L=dimethoxymethylvinylsilane (dmomvs), and (II): L=triethoxyvinylsilane (teovs), for chemical vapor deposition of copper thin films were developed. These copper (+1) precursors containing alkoxysilylolefin ligands are more thermally stable than the previously known (hfac)Cu(tmvs), where tmvs represents trimethylvinylsilane. At the deposition temperature of 195 deg C, the resulting copper films had a resistivity of 2.0 mu Omega cm using precursor I in the presence of water and using precursor II without water additive. The thickness of the films ranged from 4400 to 8000 A with reposition times of 8 to 10 min.